Latest advance on seamless metal-semiconductor contact with

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Shu WANG, Doctor of Engineering, Chinese Academy of Sciences, Beijing, CAS, National Center for Nanoscience and Technology

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D3CP06189B

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices - ScienceDirect

Recent advances in TMD interfaces with seamless contacts - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC02734H

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